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FLL21E090IY
L,S-band High Power GaAs FET
FEATURES
High Voltage Operation (VDS=28V) GaAs FET High Gain: 15.5dB(typ.) at Pout=43dBm(Avg.) Broad Frequency Range : 2110 to 2170MHz High Reliability
DESCRIPTION
The FLL21E090IY is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated base station amplifiers. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATING Item
Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature
Symbol
VDS VGS PT T stg T ch
Condition TC=25 C
(Case Tem perature)
o
Rating 32 -3 134 65 to +175 200
o
Unit
V V W o C o C
-
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 C) Item
DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature
Symbol
VDS IGF IGR T ch
Condition
RG=2 RG=2
Limit <28 <352 >-31 155
Unit
V mA mA o C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 C) Item
Pinch-Off Voltage Gate-Source Breakdown Voltage 3rd Order Intermodulation Distortion Power Gain Drain Efficiency Adjacent Channel Leakage Power Ratio Themal Resistance
Note 1 : IM3, ACLR and Gain test conditions as follows
IM3 & Gain : f 0=2.1325GHz, f 1=2.1475GHz W-CDMA(3GPP3.4 12-0) BS-1 64ch non clipping modulation measured over 3.84MHz at f 0-15MHz and f 1+15MHz. ACLR : f 0=2.1325GHz W-CDMA (3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at f 0+/-5MHz
o
Symbol
VP VGSO IM 3 GP D ACLR Rth
Condition
VDS=5V, IDS=151mA IGS=-1.51mA VDS=28V IDS(DC)=750mA Pout=43dBm(Avg.)
Note 1
Limit
Min. -0.1 -5 14.5 Typ. -0.2 -33 15.5 26 -35 1.1 Max. -0.5 -30 1.3
Unit
V V dBc dB %
o
Channel to Case
dBc C/W
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k )
CLASS III
2000V ~
CASE STYLE : IY
Edition 1.1 June 2004
1
FLL21E090IY
L,S-band High Power GaAs FET
Output Power vs. Frequency VDS=28V, IDS=750mA
52 50 48 46 44 42 40 38 36 34 32 30 2.08
Output Power & Drain Efficiency vs. Input Power VDS=28V, IDS=750mA, f=2.14GHz
52 50 48
Output Power [dBm]
100 90
Drain Efficiency [%]
Output Power [dBm]
46 44 42 40 38 36
P out
80 70 60 50 40 d 30 20 10 0
2.1
2.12
2.14
2.16
2.18
2.2
34 32 20 22 24 26 28 30 32 34 36 38 40
Frequency [GHz] Pin=22dBm Pin=34dBm Pin=26dBm Pin=38dBm Pin=30dBm
Input Pow er [dBm ]
Two-Carrier IMD(ACLR) vs. Output Power VDS=28V IDS=750mA fo=2.1325, f1=2.1475GHz W-CDMA 3-GPP BS-1 64ch Modulation
Single-Carrier ACLR vs. Output Power VDS=28V IDS=750mA fo=2.1325GHz W-CDMA 3GPP BS-1 64ch Modulation
-25 -30 -35
35
-25
Drain Efficiency[%]
35
Drain Efficiency[%]
30 25 20 15 10 5 0 26 28 30 32 34 36 38 40 42 44 46 Output Power[dBm] IM3 IM5 Drain Efficiency
-30
ACLR[dBc]
30 25 20 15 10 5 0 26 28 30 32 34 36 38 40 42 44 46 Output Power[dBm] +/-5MHz +/-10MHz
-35 -40 -45 -50 -55 -60
IMD[dBc]
-40 -45 -50 -55 -60
Drain Efficiency
2
FLL21E090IY
L,S-band High Power GaAs FET
CWIMD vs. Tone Spacing @VDS=28V, IDS=750mA, fc=2.14GHz Pout=43dBm
-20 -25 -30
IM3[dBc]
-35 -40 -45 -50 -55 -60 0.1 1 10 100
Tw o-Tone Spacing[MHz]
3
FLL21E090IY
L,S-band High Power GaAs FET
Board Layout
R2 C18
VGS
C14 C13
C11
C10
C17 C16 C15
VDS
C12
R1
C1
C3
C4 L1 C8
C5 C6 C7 C9x5
C2
Circuit Diagram of the Board
C14 C13C12 C11 C10
r=3.5 t=0.8mm
C15 C16 C18 C17 R2 Z5 Z6 Z7 Z8 Z9 Z10 C2 C5 C9x5 C6 C7 Z11
Z1 C1
Z2
Z3 C3
R1 C4
Z4
C8
L1
Z1, Z11 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10
9.00mm x 1.78mm Transmission Line 26.2mm x 1.78mm Transmission Line 6.60mm x 1.78mm Transmission Line 6.00mm x 13.0mm Transmission Line 23.0mm x 0.50mm Transmission Line 3.00mm x 25.0mm Transmission Line 3.00mm x 13.0mm Transmission Line 23.0mm x 1.50mm Transmission Line 10.8mm x 1.78mm Transmission Line 22.0mm x 1.78mm Transmission Line
C1,C2 10pF C3 1.0pF C4 2.0pF C5,C6,C7 0.5pF C8 1.5pF C9 0.1uF C10,C15 20pF C11,C16 100nF C12,C17 1000pF C13,C14 10uF 4
C18 L1 R1 R2
22uF 3.3nF 2.0ohm 51ohm
Board input size r=3.5 t=0.8mm 50mm x 50mm output size r=3.5 t=0.8mm 50mm x 50mm
FLL21E090IY
L,S-band High Power GaAs FET
S-Parameters @VDS=28V, IDS=750mA, f=1.0 to 3.0 GHz
+50j +25j +100j
[GHz] M AG ANG M AG ANG M AG ANG M AG ANG
S11 S22
+10j
+250j
0 2.0GHz
2.1
2.2 50 2.1 2.2
2.0GHz
- 10j
- 250j
- 25j - 50j
- 100j
+90
S21 S12
3. 2. 0 5 180 Scal for S 21 e
0. 0. 08 1 0 S cal for S 12 e 2. G H z 0 2. 2
1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00
0.9634 0.9567 0.9592 0.9583 0.9524 0.9571 0.9465 0.9396 0.918 0.8744 0.7691 0.6787 0.6782 0.6957 0.7087 0.7284 0.749 0.7702 0.785 0.8009 0.8271 0.84 0.9158 0.9361 0.9386 0.9455 0.9501 0.9493 0.9576 0.9579
-172.52 -171.64 -170.81 -170.19 -169.69 -168.96 -168.85 -168.87 -169.14 -169.91 -169.68 -155.22 -153.28 -151.96 -150.22 -148.84 -147.98 -147.49 -146.95 -146.8 -146.95 -146.99 -149.95 -151.12 -151.16 -150.74 -150.74 -149.64 -149.8 -149.24
0.185 0.1738 0.1796 0.1856 0.2063 0.2399 0.3019 0.4171 0.5432 0.8481 1.4267 2.3705 2.4453 2.5065 2.5554 2.5928 2.6012 2.6085 2.5937 2.5666 2.5421 2.5068 1.781 0.9958 0.5194 0.3276 0.1998 0.1465 0.1235 0.0903
21.926 22.708 23.891 22.494 23.295 20.502 19.887 9.7863 -0.3251 -13.596 -39.755 -86.126 -92.117 -98.556 -104.83 -111.25 -117.67 -124.11 -130.41 -136.59 -142.62 -148.63 154.66 115.92 93.577 82.725 72.912 77.149 67.632 65.358
0.0011 0.0012 0.0014 0.0016 0.0016 0.0026 0.0031 0.0039 0.004 0.0056 0.0064 0.0054 0.0049 0.0047 0.0044 0.0038 0.0035 0.0032 0.0034 0.0032 0.0033 0.0033 0.0048 0.0035 0.0019 0.0013 0.001 0.0019 0.0022 0.004
91.071 105.34 106.3 119.39 112.69 122.64 127.43 122.24 113.26 111.46 73.076 15.023 4.6718 -10.341 -21.605 -31.755 -51.932 -66.043 -81.24 -99.392 -115.92 -139.05 129.47 97.983 94.352 88.626 -156.21 -171.48 -161.33 -162.61
0.9638 0.9571 0.9589 0.9571 0.9566 0.9558 0.9539 0.9461 0.9385 0.9276 0.9273 0.9018 0.8894 0.8739 0.8562 0.8371 0.8094 0.7809 0.7498 0.7194 0.6822 0.6444 0.4764 0.7412 0.8586 0.9035 0.9267 0.9347 0.947 0.947
-171.69 -171.44 -170.97 -170.73 -170.11 -169.73 -169.55 -169.47 -169.79 -170.16 -171.5 -177.51 -178.55 -179.66 179.2 178.16 177.06 176.19 175.39 174.76 174.43 174.64 -147.42 -138.53 -142.64 -145.25 -147.06 -147.9 -148.56 -148.91
2. 1 -90
5
FLL21E090IY
L,S-band High Power GaAs FET
IY Package Outline
9.98
R1.524
4.826
3.251
9.779
4.826
12.7 29.50 34.036
0.152 1.575
Unit : mm
6
FLL21E090IY
L,S-band High Power GaAs FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461
Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others.
(c) 2004 Eudyna Devices USA Inc. Printed in U.S.A.
TEL +81-45-853-8156 FAX +81-45-853-8170
7

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